Fabrication of BSCCO Films using CVD Process
نویسندگان
چکیده
منابع مشابه
Effect of CVD process parameters on phase and chemical composition of BSCCO thin films
Superconducting BSCCO thin films were obtained with high deposition rate (about 35 nmlmin) at temperatures of 720-8100C by MOCVD-technique. Characteristics of evaporation process of precursors were determined. The influence of deposition temperature and oxygen e a l pressure on superconducting phase formation and chemical composition of the films was studied. For recent years many studies were ...
متن کاملSuperconductivity in CVD diamond films.
A beautiful jewel of diamond is insulator. However, boron doping can induce semiconductive, metallic and superconducting properties in diamond. When the boron concentration is tuned over 3 × 10(20) cm(-3), diamonds enter the metallic region and show superconductivity at low temperatures. The metal-insulator transition and superconductivity are analyzed using ARPES, XAS, NMR, IXS, transport and ...
متن کاملInfluence of CVD process duration on morphology, structure and sensing properties of carbonaceous- palladium films
We present the nanocomposite carbonaceous-palladium (C-Pd) thin films prepared by physical vapor deposition (PVD) and chemical vapor deposition (CVD) methods. Scanning electron microscope (SEM) and transmission electron microscope (TEM) methods were used to study the topography, morphology and structure of carbon and palladium nanograins contained in these films. The quantitative analysis of th...
متن کاملProcess control of CVD deposition of Nanocrystalline diamond films by optical emission spectroscopy
In this work NCD films were deposited in a MW-CVD plasma chamber from an Ar/ H2/CH4 plasma and the signals of the C2 dimer in the plasma were analyzed with optical emission spectroscopy (OES) during deposition. By controlling the process parameters the intensity of the C2 emission line was systematically varied and a correlation of plasma parameters with film properties was found in an empirica...
متن کاملRAMAN SPECTROSCOPY CHARACTERIZATION OF POLYCRYSTALLINE GaP THIN FILMS GROWN BY MO-CVD PROCESS USING [Et2Ga - PEt2]3 AS ONLY SOURCE
Growth of polycrystalline GaP layers has been obtained between 650 and 775°C, by low pressure metalorganic chemical vapor deposition, using the only molecule [Et„Ga-PEt„] as element source. The disorder has been characterized by Raman spectroscopy. Introduction.The metalorganic chemical vapor deposition process (MO-CVD) is well adapted to the realization of III-V semiconductor thin layers used ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Transactions on Electrical and Electronic Materials
سال: 2004
ISSN: 1229-7607
DOI: 10.4313/teem.2004.5.4.158